PHT2NQ10T MOSFET

PHT2NQ10T PHT2NQ10T
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PHT2NQ10T MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: PHT2NQ10T
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 2.5 A
  • Drain-Source Capacitance: 29 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 7.7 nS
  • Maximum Drain-Source On-State Resistance: 0.43 Ohm
  • Total Gate Charge: 5.1 nC
  • Maximum Power Dissipation: 6.25 W
  • Package: SOT-223

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