PJ4N3KDW MOSFET

PJ4N3KDW PJ4N3KDW
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PJ4N3KDW MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: PJ4N3KDW
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: 4N3
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 1.5 V
  • Maximum Drain Current: 0.1 A
  • Drain-Source Capacitance: 8 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 8.5 nS
  • Maximum Drain-Source On-State Resistance: 5 Ohm
  • Total Gate Charge: 0.8 nC
  • Maximum Power Dissipation: 0.2 W
  • Package: SOT-363