QJD1210010 MOSFET

QJD1210010 QJD1210010
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QJD1210010 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QJD1210010
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 1200 V
  • Maximum Gate-Source Voltage: 25 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 100 A
  • Drain-Source Capacitance: 1000 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 13.6 nS
  • Maximum Drain-Source On-State Resistance: 0.025 Ohm
  • Total Gate Charge: 500 nC
  • Maximum Power Dissipation: 1080 W
  • Package: MODULE

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