QM0006G MOSFET

QM0006G QM0006G
TransistorData.com is not an official representative or the creator of the MOSFET QM0006G Transistor. Copyrighted materials belong to their respective owners. Please Note: Users can download the official QM0006G transistor datasheet in PDF, pin diagram, pnp pinout circuit and equivalent transistor data.

QM0006G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM0006G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 3 A
  • Drain-Source Capacitance: 100 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 22 nS
  • Maximum Drain-Source On-State Resistance: 0.075 Ohm
  • Total Gate Charge: 40 nC
  • Maximum Power Dissipation: 2 W
  • Package: SOT-223

Top QM0006G Equivalent Transistors