QM0007G MOSFET

QM0007G QM0007G
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QM0007G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM0007G
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 1.5 A
  • Drain-Source Capacitance: 29 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 18.4 nS
  • Maximum Drain-Source On-State Resistance: 0.65 Ohm
  • Total Gate Charge: 9.3 nC
  • Maximum Power Dissipation: 1.5 W
  • Package: SOT-223

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