QM01N65D MOSFET

QM01N65D QM01N65D

QM01N65D MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM01N65D
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 650 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 1.2 A
  • Drain-Source Capacitance: 17.8 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 18.4 nS
  • Maximum Drain-Source On-State Resistance: 12 Ohm
  • Total Gate Charge: 6.03 nC
  • Maximum Power Dissipation: 41.6 W
  • Package: TO-252

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