QM04N65B MOSFET

QM04N65B QM04N65B
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QM04N65B MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM04N65B
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 650 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 4 A
  • Drain-Source Capacitance: 56 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 18.8 nS
  • Maximum Drain-Source On-State Resistance: 2.6 Ohm
  • Total Gate Charge: 18 nC
  • Maximum Power Dissipation: 112 W
  • Package: TO-263

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