QM04N65D MOSFET

QM04N65D QM04N65D

QM04N65D MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM04N65D
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 650 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 4 A
  • Drain-Source Capacitance: 56 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 18.8 nS
  • Maximum Drain-Source On-State Resistance: 2.6 Ohm
  • Total Gate Charge: 18 nC
  • Maximum Power Dissipation: 62.5 W
  • Package: TO-252

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