QM09N50F MOSFET


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QM09N50F MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: QM09N50F
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 500 V
- Maximum Gate-Source Voltage: 30 V
- Maximum Gate-Threshold Voltage: 5 V
- Maximum Drain Current: 9 A
- Drain-Source Capacitance: 112 pF
- Maximum Operating Junction Temperature: 150 °C
- Rise Time: 19.2 nS
- Maximum Drain-Source On-State Resistance: 0.75 Ohm
- Total Gate Charge: 34 nC
- Maximum Power Dissipation: 30 W
- Package: TO-220F