QM10N60F MOSFET

QM10N60F QM10N60F
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QM10N60F MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM10N60F
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 10 A
  • Drain-Source Capacitance: 130 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 21 nS
  • Maximum Drain-Source On-State Resistance: 0.7 Ohm
  • Total Gate Charge: 46 nC
  • Maximum Power Dissipation: 42 W
  • Package: TO-220F

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