QM12N65F MOSFET

QM12N65F QM12N65F
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QM12N65F MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM12N65F
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 650 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 12 A
  • Drain-Source Capacitance: 128 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 20 nS
  • Maximum Drain-Source On-State Resistance: 0.8 Ohm
  • Total Gate Charge: 44 nC
  • Maximum Power Dissipation: 40 W
  • Package: TO-220F

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