QM2401C1 MOSFET


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QM2401C1 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: QM2401C1
- Type of Control Channel: P -Channel
- Maximum Drain-Source Voltage: 20 V
- Maximum Gate-Source Voltage: 12 V
- Maximum Gate-Threshold Voltage: 1.2 V
- Maximum Drain Current: 1.9 A
- Drain-Source Capacitance: 114 pF
- Maximum Operating Junction Temperature: 150 °C
- Rise Time: 36.6 nS
- Maximum Drain-Source On-State Resistance: 0.065 Ohm
- Total Gate Charge: 10 nC
- Maximum Power Dissipation: 0.33 W
- Package: SOT-363