QM2401C1 MOSFET

QM2401C1 QM2401C1

QM2401C1 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM2401C1
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 1.2 V
  • Maximum Drain Current: 1.9 A
  • Drain-Source Capacitance: 114 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 36.6 nS
  • Maximum Drain-Source On-State Resistance: 0.065 Ohm
  • Total Gate Charge: 10 nC
  • Maximum Power Dissipation: 0.33 W
  • Package: SOT-363