QM2416C1 MOSFET

QM2416C1 QM2416C1

QM2416C1 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM2416C1
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 8 V
  • Maximum Gate-Threshold Voltage: 1 V
  • Maximum Drain Current: 1.8 A
  • Drain-Source Capacitance: 41 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 29.6 nS
  • Maximum Drain-Source On-State Resistance: 0.065 Ohm
  • Total Gate Charge: 6.4 nC
  • Maximum Power Dissipation: 0.33 W
  • Package: SOT-363