QM2417C1 MOSFET

QM2417C1 QM2417C1
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QM2417C1 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM2417C1
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 1.2 V
  • Maximum Drain Current: 1 A
  • Drain-Source Capacitance: 33 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 8 nS
  • Maximum Drain-Source On-State Resistance: 0.24 Ohm
  • Total Gate Charge: 2.9 nC
  • Maximum Power Dissipation: 0.33 W
  • Package: SOT-363

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