QM2601S MOSFET

QM2601S QM2601S
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QM2601S MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM2601S
  • Type of Control Channel: NP -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 1.2 V
  • Maximum Drain Current: 7.2 A
  • Drain-Source Capacitance: 86 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 61 nS
  • Maximum Drain-Source On-State Resistance: 0.018 Ohm
  • Total Gate Charge: 11.4 nC
  • Maximum Power Dissipation: 1.5 W
  • Package: SOP-8

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