QM2606C1 MOSFET

QM2606C1 QM2606C1
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QM2606C1 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM2606C1
  • Type of Control Channel: NP -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 1.2 V
  • Maximum Drain Current: 1.52 A
  • Drain-Source Capacitance: 30 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 26.6 nS
  • Maximum Drain-Source On-State Resistance: 0.09 Ohm
  • Total Gate Charge: 3.64 nC
  • Maximum Power Dissipation: 0.33 W
  • Package: SOT-363

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