QM2608N8 MOSFET

QM2608N8 QM2608N8
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QM2608N8 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM2608N8
  • Type of Control Channel: NP -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 1 V
  • Maximum Drain Current: 3.8 A
  • Drain-Source Capacitance: 41 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 40 nS
  • Maximum Drain-Source On-State Resistance: 0.048 Ohm
  • Total Gate Charge: 6.2 nC
  • Maximum Power Dissipation: 1.1 W
  • Package: DFN3x2

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