QM2N7002E3K1 MOSFET

QM2N7002E3K1 QM2N7002E3K1
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QM2N7002E3K1 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM2N7002E3K1
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 0.18 A
  • Drain-Source Capacitance: 12 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 1.8 nS
  • Maximum Drain-Source On-State Resistance: 3 Ohm
  • Maximum Power Dissipation: 0.2 W
  • Package: SOT-23S

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