QM3010B MOSFET

QM3010B QM3010B
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QM3010B MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM3010B
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 19 A
  • Drain-Source Capacitance: 38 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 10.8 nS
  • Maximum Drain-Source On-State Resistance: 0.045 Ohm
  • Total Gate Charge: 2.6 nC
  • Maximum Power Dissipation: 26 W
  • Package: TO-263

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