QM4006M6 MOSFET

QM4006M6 QM4006M6

QM4006M6 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM4006M6
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 65 A
  • Drain-Source Capacitance: 193 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 2.6 nS
  • Maximum Drain-Source On-State Resistance: 0.0085 Ohm
  • Total Gate Charge: 18.8 nC
  • Maximum Power Dissipation: 60 W
  • Package: PRPAK5x6