QM6001D MOSFET

QM6001D QM6001D
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QM6001D MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM6001D
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 11.5 A
  • Drain-Source Capacitance: 51 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 17 nS
  • Maximum Drain-Source On-State Resistance: 0.11 Ohm
  • Total Gate Charge: 5.85 nC
  • Maximum Power Dissipation: 16 W
  • Package: TO-252

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