QM6003S MOSFET

QM6003S QM6003S
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QM6003S MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM6003S
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 5.7 A
  • Drain-Source Capacitance: 97.3 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 18 nS
  • Maximum Drain-Source On-State Resistance: 0.06 Ohm
  • Total Gate Charge: 9.86 nC
  • Maximum Power Dissipation: 3.5 W
  • Package: SOP-8

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