QM6004P MOSFET

QM6004P QM6004P
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QM6004P MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM6004P
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 35 A
  • Drain-Source Capacitance: 86 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 14.2 nS
  • Maximum Drain-Source On-State Resistance: 0.03 Ohm
  • Total Gate Charge: 12.56 nC
  • Maximum Power Dissipation: 58 W
  • Package: TO-220

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