QM6007K MOSFET

QM6007K QM6007K

QM6007K MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM6007K
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 2.2 A
  • Drain-Source Capacitance: 59 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 5.4 nS
  • Maximum Drain-Source On-State Resistance: 0.175 Ohm
  • Total Gate Charge: 4.59 nC
  • Maximum Power Dissipation: 1.6 W
  • Package: TO-252