QM6008G MOSFET

QM6008G QM6008G

QM6008G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM6008G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 2.8 A
  • Drain-Source Capacitance: 38 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 7.2 nS
  • Maximum Drain-Source On-State Resistance: 0.1 Ohm
  • Total Gate Charge: 5 nC
  • Maximum Power Dissipation: 1.5 W
  • Package: SOT-223