QM6008S MOSFET

QM6008S QM6008S
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QM6008S MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QM6008S
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 3 A
  • Drain-Source Capacitance: 38 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 7.2 nS
  • Maximum Drain-Source On-State Resistance: 0.09 Ohm
  • Total Gate Charge: 5 nC
  • Maximum Power Dissipation: 1.5 W
  • Package: SOP-8

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