QS6K1 MOSFET

QS6K1 QS6K1
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QS6K1 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QS6K1
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 1.5 V
  • Maximum Drain Current: 1 A
  • Drain-Source Capacitance: 25 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 7 nS
  • Maximum Drain-Source On-State Resistance: 0.238 Ohm
  • Total Gate Charge: 1.7 nC
  • Maximum Power Dissipation: 0.9 W
  • Package: TSMT6

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