QS6M4 MOSFET

QS6M4 QS6M4
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QS6M4 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QS6M4
  • Type of Control Channel: NP -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 1.6 V
  • Maximum Drain Current: 1.5 A
  • Drain-Source Capacitance: 25 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 18 nS
  • Maximum Drain-Source On-State Resistance: 0.23 Ohm
  • Maximum Power Dissipation: 0.9 W
  • Package: TSMT6

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