QS8F2 MOSFET

QS8F2 QS8F2
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QS8F2 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QS8F2
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 12 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Gate-Threshold Voltage: 1 V
  • Maximum Drain Current: 2.5 A
  • Drain-Source Capacitance: 130 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 35 nS
  • Maximum Drain-Source On-State Resistance: 0.061 Ohm
  • Total Gate Charge: 13 nC
  • Maximum Power Dissipation: 1.25 W
  • Package: TSMT8

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