QS8J11 MOSFET

QS8J11 QS8J11
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QS8J11 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QS8J11
  • Type of Control Channel: P -Channel
  • SMD Transistor Code: J11
  • Maximum Drain-Source Voltage: 12 V
  • Maximum Gate-Source Voltage: 8 V
  • Maximum Gate-Threshold Voltage: 1 V
  • Maximum Drain Current: 3.5 A
  • Drain-Source Capacitance: 170 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 30 nS
  • Maximum Drain-Source On-State Resistance: 0.043 Ohm
  • Total Gate Charge: 22 nC
  • Maximum Power Dissipation: 1.25 W
  • Package: TSMT8

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