QS8J12 MOSFET

QS8J12 QS8J12
TransistorData.com is not an official representative or the creator of the MOSFET QS8J12 Transistor. Copyrighted materials belong to their respective owners. Please Note: Users can download the official QS8J12 transistor datasheet in PDF, pin diagram, pnp pinout circuit and equivalent transistor data.

QS8J12 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QS8J12
  • Type of Control Channel: P -Channel
  • SMD Transistor Code: J12
  • Maximum Drain-Source Voltage: 12 V
  • Maximum Gate-Source Voltage: 8 V
  • Maximum Gate-Threshold Voltage: 1 V
  • Maximum Drain Current: 4.5 A
  • Drain-Source Capacitance: 350 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 60 nS
  • Maximum Drain-Source On-State Resistance: 0.029 Ohm
  • Total Gate Charge: 40 nC
  • Maximum Power Dissipation: 1.25 W
  • Package: TSMT8

Top QS8J12 Equivalent Transistors