QS8M51 MOSFET

QS8M51 QS8M51
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QS8M51 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: QS8M51
  • Type of Control Channel: NP -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 2 A
  • Drain-Source Capacitance: 30 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 10 nS
  • Maximum Drain-Source On-State Resistance: 0.325 Ohm
  • Total Gate Charge: 4.7 nC
  • Maximum Power Dissipation: 1.25 W
  • Package: TSMT8

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