RFH35N10 MOSFET

RFH35N10 RFH35N10
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RFH35N10 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RFH35N10
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 35 A
  • Drain-Source Capacitance: 1500 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 225 nS
  • Maximum Drain-Source On-State Resistance: 0.055 Ohm
  • Maximum Power Dissipation: 150 W
  • Package: TO-218AC

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