RFM12N10 MOSFET

RFM12N10 RFM12N10

RFM12N10 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RFM12N10
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 12 A
  • Drain-Source Capacitance: 300 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 250 nS
  • Maximum Drain-Source On-State Resistance: 0.2 Ohm
  • Maximum Power Dissipation: 75 W
  • Package: TO-204AA