RFM12N10L MOSFET

RFM12N10L RFM12N10L
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RFM12N10L MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RFM12N10L
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Gate-Threshold Voltage: 2 V
  • Maximum Drain Current: 12 A
  • Drain-Source Capacitance: 325 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 70 nS
  • Maximum Drain-Source On-State Resistance: 0.2 Ohm
  • Maximum Power Dissipation: 75 W
  • Package: TO-204AA

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