RFP10N12 MOSFET

RFP10N12 RFP10N12
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RFP10N12 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RFP10N12
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 120 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 10 A
  • Drain-Source Capacitance: 230 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 165 nS
  • Maximum Drain-Source On-State Resistance: 0.3 Ohm
  • Maximum Power Dissipation: 60 W
  • Package: TO-220AB

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