RFP12N18 MOSFET

RFP12N18 RFP12N18
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RFP12N18 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RFP12N18
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 180 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 12 A
  • Drain-Source Capacitance: 600 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 130 nS
  • Maximum Drain-Source On-State Resistance: 0.25 Ohm
  • Maximum Power Dissipation: 75 W
  • Package: TO-220AB

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