RJJ0601JPN MOSFET

RJJ0601JPN RJJ0601JPN
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RJJ0601JPN MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RJJ0601JPN
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 90 A
  • Drain-Source Capacitance: 950 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 30 nS
  • Maximum Drain-Source On-State Resistance: 0.01 Ohm
  • Total Gate Charge: 150 nC
  • Maximum Power Dissipation: 90 W
  • Package: TO-220AB

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