RJK1206JPD MOSFET

RJK1206JPD RJK1206JPD
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RJK1206JPD MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RJK1206JPD
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 120 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 30 A
  • Drain-Source Capacitance: 230 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 5 nS
  • Maximum Drain-Source On-State Resistance: 0.052 Ohm
  • Total Gate Charge: 23 nC
  • Maximum Power Dissipation: 50 W
  • Package: DPAK

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