RJK5032DPD MOSFET
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RJK5032DPD MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: RJK5032DPD
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 500 V
- Maximum Gate-Source Voltage: 30 V
- Maximum Drain Current: 3 A
- Drain-Source Capacitance: 33 pF
- Maximum Operating Junction Temperature: 150 °C
- Rise Time: 12 nS
- Maximum Drain-Source On-State Resistance: 2.8 Ohm
- Total Gate Charge: 9.2 nC
- Maximum Power Dissipation: 40.3 W
- Package: MP-3A