RJL5012DPE MOSFET

RJL5012DPE RJL5012DPE

RJL5012DPE MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RJL5012DPE
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 500 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Drain Current: 12 A
  • Drain-Source Capacitance: 115 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 22 nS
  • Maximum Drain-Source On-State Resistance: 0.7 Ohm
  • Maximum Power Dissipation: 100 W
  • Package: LDPAK