RJL5013DPE MOSFET

RJL5013DPE RJL5013DPE

RJL5013DPE MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RJL5013DPE
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 500 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Drain Current: 14 A
  • Drain-Source Capacitance: 150 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 24 nS
  • Maximum Drain-Source On-State Resistance: 0.51 Ohm
  • Total Gate Charge: 37.6 nC
  • Maximum Power Dissipation: 100 W
  • Package: LDPAK