RJP020N06T100 MOSFET

RJP020N06T100 RJP020N06T100
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RJP020N06T100 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RJP020N06T100
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: LS
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 1.5 V
  • Maximum Drain Current: 2 A
  • Drain-Source Capacitance: 50 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 18 nS
  • Maximum Drain-Source On-State Resistance: 0.24 Ohm
  • Total Gate Charge: 5 nC
  • Maximum Power Dissipation: 0.5 W
  • Package: MPT3

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