RP1A090ZP MOSFET

RP1A090ZP RP1A090ZP

RP1A090ZP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RP1A090ZP
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 12 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Drain Current: 9 A
  • Drain-Source Capacitance: 800 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 120 nS
  • Maximum Drain-Source On-State Resistance: 0.008 Ohm
  • Maximum Power Dissipation: 2 W
  • Package: MPT6