RP1A090ZPTR MOSFET

RP1A090ZPTR RP1A090ZPTR
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RP1A090ZPTR MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RP1A090ZPTR
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 12 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Gate-Threshold Voltage: 1 V
  • Maximum Drain Current: 9 A
  • Drain-Source Capacitance: 800 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 120 nS
  • Maximum Drain-Source On-State Resistance: 0.012 Ohm
  • Total Gate Charge: 59 nC
  • Maximum Power Dissipation: 2 W
  • Package: MPT6

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