RP1E090RPTR MOSFET

RP1E090RPTR RP1E090RPTR
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RP1E090RPTR MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RP1E090RPTR
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 9 A
  • Drain-Source Capacitance: 360 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 30 nS
  • Maximum Drain-Source On-State Resistance: 0.0169 Ohm
  • Total Gate Charge: 30 nC
  • Maximum Power Dissipation: 2 W
  • Package: MPT6

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