RP1E100RP MOSFET

RP1E100RP RP1E100RP

RP1E100RP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RP1E100RP
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 10 A
  • Drain-Source Capacitance: 450 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 60 nS
  • Maximum Drain-Source On-State Resistance: 0.009 Ohm
  • Maximum Power Dissipation: 2 W
  • Package: MPT6