RQ1A060ZPTR MOSFET


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RQ1A060ZPTR MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: RQ1A060ZPTR
- Type of Control Channel: P -Channel
- SMD Transistor Code: YH
- Maximum Drain-Source Voltage: 12 V
- Maximum Gate-Source Voltage: 10 V
- Maximum Gate-Threshold Voltage: 1 V
- Maximum Drain Current: 6 A
- Drain-Source Capacitance: 340 pF
- Maximum Operating Junction Temperature: 150 °C
- Rise Time: 105 nS
- Maximum Drain-Source On-State Resistance: 0.023 Ohm
- Total Gate Charge: 34 nC
- Maximum Power Dissipation: 1.5 W
- Package: TSMT8