RQ3E070BN MOSFET


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RQ3E070BN MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: RQ3E070BN
- Type of Control Channel: N -Channel
- SMD Transistor Code: E070BN
- Maximum Drain-Source Voltage: 30 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Gate-Threshold Voltage: 2.5 V
- Maximum Drain Current: 7 A
- Drain-Source Capacitance: 50 pF
- Maximum Operating Junction Temperature: 150 °C
- Rise Time: 8 nS
- Maximum Drain-Source On-State Resistance: 0.027 Ohm
- Total Gate Charge: 8.9 nC
- Maximum Power Dissipation: 2 W
- Package: HSMT8