RQ3E120AT MOSFET

RQ3E120AT RQ3E120AT
TransistorData.com is not an official representative or the creator of the MOSFET RQ3E120AT Transistor. Copyrighted materials belong to their respective owners. Please Note: Users can download the official RQ3E120AT transistor datasheet in PDF, pin diagram, pnp pinout circuit and equivalent transistor data.

RQ3E120AT MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: RQ3E120AT
  • Type of Control Channel: P -Channel
  • SMD Transistor Code: E120AT
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 12 A
  • Drain-Source Capacitance: 550 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 30 nS
  • Maximum Drain-Source On-State Resistance: 0.008 Ohm
  • Total Gate Charge: 62 nC
  • Maximum Power Dissipation: 2 W
  • Package: HSMT8

Top RQ3E120AT Equivalent Transistors